Research Title |
Reduced Dielectric Loss with Significantly Enhanced Giant Dielectric Response in CaCu3Ti4O12 Ceramics by Ge Substitution |
Date of Distribution |
5 December 2016 |
Conference |
Title of the Conference |
The 10th Asian Meeting on Electroceramics (AMEC-10, 2016) |
Organiser |
Taiwan Ceramic Society, National Taipei University of Technology |
Conference Place |
The GIS TAIPEI TECH Convention center, National Taipei University of Technology |
Province/State |
Taipei |
Conference Date |
4 December 2016 |
To |
7 November 2016 |
Proceeding Paper |
Volume |
2016 |
Issue |
1 |
Page |
- |
Editors/edition/publisher |
|
Abstract |
In this work, giant dielectric properties of CaCu3Ti4O12 ceramics prepared by a solid state reaction method were significantly improved by doping with Ge4+ ions. Dense microstructures of sintered Ge4+-doped CaCu3Ti4O12 ceramics were achieved. Distribution of the dopant in the microstructure was characterized using SEM-mapping technique and found to be homogeneously dispersed. Notably, enhanced dielectric permittivity (1.37105) with low loss tangent (tan 0.07) was obtained in Ge4+-doped CaCu3Ti4O12 ceramic sintered at 1050 oC for 6 h. Nonlinear currentvoltage characteristics were investigated at different temperatures. Accordingly, the electrostatic potential barrier height the grain boundary was calculated. The effects of DC bias on the dielectric and electrical responses were also studied. Xray absorption near edge structure (XANES) and Xray photoelectron (XPS) analyses confirmed the co-existence of Cu+, Cu3+ and Ti3+ ions. By using an impedance spectroscopy, the dielectric and nonlinear electrical properties can be well described based on the electrical response of the grain boundary. |
Author |
|
Peer Review Status |
ไม่มีผู้ประเมินอิสระ |
Level of Conference |
นานาชาติ |
Type of Proceeding |
Abstract |
Type of Presentation |
Poster |
Part of thesis |
true |
Presentation awarding |
false |
Attach file |
|
Citation |
0
|
|