| Research Title |
Nonlinear Electrical Properties and Enhanced Dielectric Permittivity with Suppressed Loss Tangent in (Al1/2Ta1/2)xTi1-xO2 Ceramics |
| Date of Distribution |
28 May 2018 |
| Conference |
| Title of the Conference |
2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference |
| Organiser |
IFAAP Hiroshima |
| Conference Place |
International Conference Center at Hiroshima |
| Province/State |
Hiroshima |
| Conference Date |
27 May 2018 |
| To |
1 June 2018 |
| Proceeding Paper |
| Volume |
2018 |
| Issue |
1 |
| Page |
54 |
| Editors/edition/publisher |
|
| Abstract |
Recently, oxide materials with giant dielectric permittivity have found an important role in microelectronic devices and high density storage applications such as capacitors and memory devices [1,2]. Here, the giant dielectric properties of (Al1/2Ta1/2)xTi1-xO2 (ATTO) ceramics, which were prepared by a solid state reaction method. The microstructure analysis revealed that all sintered ceramics were highly dense. The effects of doping co-concentration and sintering temperature on the giant dielectric properties of ATTO ceramics were also studied. As illustrated in Fig. 1, the dielectric permittivity increased with increasing co-doping concentration. All sintered ceramics exhibited very high dielectric permittivity. Interestingly, low dielectric loss tangent (<0.05) was obtained. Furthermore, the nonlinear current-voltage properties were investigated as well. All sintered ceramic exhibited nonlinear current-voltage characteristic. The origin of the giant dielectric response in ATTO ceramics was described based on the interfacial polarization. |
| Author |
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| Peer Review Status |
ไม่มีผู้ประเมินอิสระ |
| Level of Conference |
นานาชาติ |
| Type of Proceeding |
Abstract |
| Type of Presentation |
Poster |
| Part of thesis |
true |
| ใช้สำหรับสำเร็จการศึกษา |
ไม่เป็น |
| Presentation awarding |
false |
| Attach file |
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| Citation |
0
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Publication
Journal Publication
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