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Publication
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| Title of Article |
Studying steady state one-dimensional p-n junction using finite element method |
| Date of Acceptance |
1 March 2010 |
| Journal |
| Title of Journal |
KKU Research Journal |
| Standard |
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| Institute of Journal |
Khon Kaen University Khon Kaen, Thailand. |
| ISBN/ISSN |
0859-3957 |
| Volume |
15 |
| Issue |
3 |
| Month |
March |
| Year of Publication |
2010 |
| Page |
187-201 |
| Abstract |
We have implemented a computer program that solved semiconductor device equations using the finite element method. A set of three coupled equations, (i) Poisson's equation, (ii) electron continuity equation, and (iii) hole continuity equation were solved iteratively using Gummel's method. The numerical method used was based on the Galerkin finite element scheme. Upon finding the solutions, the algorithm provided us with important information relevant to semiconductor devices such as electric field, potential, and carrier concentration within the device. In addition, I-V characteristic for the semiconductor device could be calculated. We simulated a representative case: p-n junction diode. The results were in good agreement with previously published studies by De Mari. |
| Keyword |
finite element method, p-n junction, Gummel's method |
| Author |
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| Reviewing Status |
มีผู้ประเมินอิสระ |
| Status |
ตีพิมพ์แล้ว |
| Level of Publication |
ชาติ |
| citation |
true |
| Part of thesis |
true |
| Attach file |
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| Citation |
0
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Journal Publication
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