| Title of Article |
Effect of TiO2 capping layer on reset current of lateral phase change memory |
| Date of Acceptance |
22 July 2014 |
| Journal |
| Title of Journal |
ECTI Transactions on Computer and Information Technology (ECTI‐CIT) |
| Standard |
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| Institute of Journal |
ECTI Association |
| ISBN/ISSN |
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| Volume |
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| Issue |
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| Month |
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| Year of Publication |
2015 |
| Page |
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| Abstract |
Lateral Phase Change Memories (LPCMs) gained a lot of interesting due to its simpler fabrication process and lower reset current comparing with vertical-structure phase change memories. The capping layer can be easily fabricated and changed on the active phase-change region of LPCM. The knowledge of capping layer on the thermal generation and diffusion on LPCM can provide an alternative design approach to alleviate the high reset current issue of PCM. The location and thickness of TiO2 capping layer were studied in order to achieve higher power consumption efficiency using finite element analysis. The four LPCM structures with various location of capping layer were modelled. The simulation results found that addition TiO2 capping layer can increase power efficiency. The proper location to place TiO2 capping layer is at the centre of the active phase-change layer found in Model 4. The thickness of capping layer was developed based on Model 4; and thickness of 40nm was given the best result. The combination of proper location and thickness of TiO2 capping layer can offer a reduction of the LPCM reset current by 24%. |
| Keyword |
Phase change memory, LPCM, Reset current, Finite element, Structure design, TiO2 capping layer, Capping layer location, Capping layer thickness |
| Author |
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| Reviewing Status |
มีผู้ประเมินอิสระ |
| Status |
ได้รับการตอบรับให้ตีพิมพ์ |
| Level of Publication |
นานาชาติ |
| citation |
false |
| Part of thesis |
true |
| Attach file |
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| Citation |
0
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Publication
Journal Publication
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