Title of Article |
Effect of complex defects on the origin of giant dielectric properties of Mg2+-doped BiFeO3 ceramics prepared by a precipitation method |
Date of Acceptance |
25 June 2020 |
Journal |
Title of Journal |
Ceramics International |
Standard |
ISI |
Institute of Journal |
elsevier |
ISBN/ISSN |
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Volume |
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Issue |
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Month |
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Year of Publication |
2020 |
Page |
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Abstract |
Nanocrystalline powders of BiFe1-xMgxO3 (x = 0, 0.05, and 0.10) were prepared via a co-precipitation method. This produced a dense ceramic microstructure when sintering the compacted nanocrystalline powders at 800 oC for 3 h. A main phase of BiFeO3 with a small number of impurity phases was confirmed to exist in the sintered ceramics. The oxidation states of Fe2+ and Fe3+ were confirmed using X-ray photoelectron spectroscopy. High dielectric permittivity values of 103-105 in the temperature range of 200-473 K were obtained. Dielectric relaxation behavior was studied over a wide temperature range. The low- and high-temperature dielectric relaxations originated from electron hopping between Fe2+Fe3+ and the interfacial polariza-tion associated with the long-range motion of free charge carriers, respectively. To describe the dielectric properties of the Mg2+-doped BiFeO3 ceramics, theoretical calculations were performed to study the most preferable formation of complex defects. It was found that the dopant concentration had an effect on the defect shapes, and dielectric properties. |
Keyword |
Mg2+-doped BiFeO3; colossal dielectric permittivity; density functional theory |
Author |
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Reviewing Status |
มีผู้ประเมินอิสระ |
Status |
ได้รับการตอบรับให้ตีพิมพ์ |
Level of Publication |
นานาชาติ |
citation |
false |
Part of thesis |
true |
Attach file |
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Citation |
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