Title of Article |
Confined-Chalcogenide Phase-Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling |
Date of Acceptance |
16 September 2008 |
Journal |
Title of Journal |
Solid State Phenomena |
Standard |
|
Institute of Journal |
Trans Tech Publications, Switzerland |
ISBN/ISSN |
1662-9779 |
Volume |
2009 |
Issue |
152-153 |
Month |
|
Year of Publication |
2009 |
Page |
399-402 |
Abstract |
This paper reports on the confined-chalcogenide phase change memory with thin metal
interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset
current with simple architecture and fabrication. Thermal and heat flux distribution of both the
normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and
simulated by two-dimensional finite element modeling. It is intriguingly found that the reset
operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to
solve an over-programming fail issue due to confined heat dissipation in active area. |
Keyword |
Phase change memory (PCM), Confined-chalcogenide phase change memory with thin metal interlayer (CCTMI), Normal bottom contact (NBC), Low reset current, Finite element. |
Author |
|
Reviewing Status |
มีผู้ประเมินอิสระ |
Status |
ตีพิมพ์แล้ว |
Level of Publication |
นานาชาติ |
citation |
false |
Part of thesis |
true |
Attach file |
|
Citation |
0
|
|