| Title of Article |
Confined-Chalcogenide Phase-Change Memory with Thin Metal Interlayer for Low Reset Current by Finite Element Modeling |
| Date of Acceptance |
16 September 2008 |
| Journal |
| Title of Journal |
Solid State Phenomena |
| Standard |
|
| Institute of Journal |
Trans Tech Publications, Switzerland |
| ISBN/ISSN |
1662-9779 |
| Volume |
2009 |
| Issue |
152-153 |
| Month |
|
| Year of Publication |
2009 |
| Page |
399-402 |
| Abstract |
This paper reports on the confined-chalcogenide phase change memory with thin metal
interlayer (CCTMI) with the operating reset current of 0.6mA-30ns. This cell offers low reset
current with simple architecture and fabrication. Thermal and heat flux distribution of both the
normal-bottom-contact (NBC) and a proposed CCTMI PCM cells were carefully analyzed and
simulated by two-dimensional finite element modeling. It is intriguingly found that the reset
operation current of the CCTMI cell is 44% lower than that of the NBC. CCTMI has capability to
solve an over-programming fail issue due to confined heat dissipation in active area. |
| Keyword |
Phase change memory (PCM), Confined-chalcogenide phase change memory with thin metal interlayer (CCTMI), Normal bottom contact (NBC), Low reset current, Finite element. |
| Author |
|
| Reviewing Status |
มีผู้ประเมินอิสระ |
| Status |
ตีพิมพ์แล้ว |
| Level of Publication |
นานาชาติ |
| citation |
false |
| Part of thesis |
true |
| ใช้สำหรับสำเร็จการศึกษา |
ไม่เป็น |
| Attach file |
|
| Citation |
0
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Publication
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