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Publication
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| Title of Article |
Origin(s) of the apparent colossal permittivity in
(In1/2Nb1/2)xTi1xO2: clarification on the strongly
induced Maxwell–Wagner polarization relaxation
by DC bias |
| Date of Acceptance |
16 November 2016 |
| Journal |
| Title of Journal |
RSC advances |
| Standard |
ISI |
| Institute of Journal |
Elsevier |
| ISBN/ISSN |
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| Volume |
2017 |
| Issue |
7 |
| Month |
November |
| Year of Publication |
2017 |
| Page |
95-105 |
| Abstract |
The effects of DC bias on the dielectric and electrical properties of co-doped (In1/2Nb1/2)xTi1xO2 (IN-T),where x ¼ 0.05 and 0.1, and single-doped Ti0.975Nb0.025O2 ceramics are investigated. The low-frequency dielectric permittivity (30) and loss tangent of IN-T ceramics with x ¼ 0.05 and 0.1 are greatly enhancedby applying a DC bias at 40 and 20 V, respectively, whereas the relatively high-frequency 30 remains
unchanged. The induced low-frequency Maxwell–Wagner polarization completely vanishes by
immediately applying no DC bias. After overload limited measurement, this polarization permanently
emerges without DC bias, whereas the primary polarization remains unchanged. Using combined Z00 and
M00 spectroscopic plots, it is found that the strongly induced-polarizations are contributed from the
combination effects of the sample–electrode contact and resistive outer surface. Very high performance
of the colossal permittivity in IN-T ceramics is attributed to the formation of a resistive outer-surface
layer and insulating grain boundaries. These results not only provide important insights into the origins of
the colossal dielectric response in the IN-T ceramic system, but are also important for deciding the
doping conditions of TiO2-based materials for practical applications. |
| Keyword |
DC bias, dielectric permittivity, Maxwell–Wagner polarization |
| Author |
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| Reviewing Status |
มีผู้ประเมินอิสระ |
| Status |
ตีพิมพ์แล้ว |
| Level of Publication |
นานาชาติ |
| citation |
true |
| Part of thesis |
true |
| Attach file |
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| Citation |
0
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Journal Publication
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