Title of Article |
Effects of sintering temperature on microstructure and giant dielectric properties of (V + Ta) coedoped TiO2 ceramics |
Date of Acceptance |
13 July 2017 |
Journal |
Title of Journal |
Journal of Alloys and Compounds |
Standard |
ISI |
Institute of Journal |
elsevier |
ISBN/ISSN |
|
Volume |
2017 |
Issue |
725 |
Month |
18 July 2017 |
Year of Publication |
2017 |
Page |
310-317 |
Abstract |
The influences of sintering temperature on the microstructure and giant dielectric properties of a new
co-doped TiO2 system, i.e., V and Ta co-doped TiO2, were investigated. The grain size of (V1/2Ta1/
2)0.01Ti0.99O2 ceramics was enlarged with increasing sintering temperature. Dense microstructure and
homogeneous dispersion of dopants were achieved in the ceramics sintered at 1400e1500 C for 5 h. The
dielectric permittivity in the frequency range 40e106 Hz of the (V1/2Ta1/2)0.01Ti0.99O2 ceramics significantly
increased with the mean grain size, while the dielectric loss tangent was reduced to 0.033 at
102 Hz. Furthermore, the high-temperature stability of the dielectric permittivity was improved with
increasing mean grain size. The electrically heterogeneous microstructure consisting of semiconducting
grains and insulating grain boundaries and/or surface layers was confirmed using impedance spectroscopy.
The conduction inside the semiconducting grains was attributed to electron hopping between
Ti4þ and Ti3þ, which was confirmed by X-ray photoelectron spectroscopy. Very high resistivity with a
large conduction activation energy of the insulating parts was suggested as the primary cause of the
giant dielectric permittivity with low loss tangent. |
Keyword |
Rutile TiO2 Giant dielectric permittivity Impedance spectroscopy Ceramic microstructure X-ray photoelectron spectroscopy Grain size |
Author |
|
Reviewing Status |
มีผู้ประเมินอิสระ |
Status |
ตีพิมพ์แล้ว |
Level of Publication |
นานาชาติ |
citation |
false |
Part of thesis |
true |
Attach file |
|
Citation |
0
|
|