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Publication
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Title of Article |
Enhancing Thermoelectric Properties of Higher Manganese Silicide (HMS) by Partial Ta Substitution |
Date of Acceptance |
9 October 2019 |
Journal |
Title of Journal |
Journal of ELECTRONIC MATERIALS |
Standard |
SCOPUS |
Institute of Journal |
Springer US |
ISBN/ISSN |
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Volume |
2019 |
Issue |
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Month |
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Year of Publication |
2019 |
Page |
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Abstract |
In this work, the thermoelectric properties of the p-type higher manganese silicide (HMS) were enhanced by partially substituting Mn with Ta. The in- gots of the compound Mn36.4xTaxSi63.6, where x = 0.00, 0.25, 0.50. 0.75 and 1.00, were synthesized via arc melting which were then cast into a ribbon shape by a melt spinning process. After that, the crushed ribbons were con- solidated to form a bulk sample by spark plasma sintering. The x-ray diffraction analysis showed that the single phase of HMS existed for x up to 0.50. Above that, the evidence of secondary phases was found, confirmed by scanning electron microscope imaging with elemental mapping. For thermo- electric properties measurement, the Seebeck coefficient and electrical con- ductivity were insignificantly different in the pure-phase samples. On the other hand, the samples with secondary phases showed increased electrical conductivities but slightly decreased Seebeck coefficients. The thermal con- ductivity was suppressed in all Ta-substituted samples. The lowest lattice thermal conductivity was found in the sample with the impurity phase (TaSi2) due to the enhanced phonon scattering. Consequently, the ZT of the Ta-substituted HMS was enhanced with the peak ZT of 0.37 at 813 K, which is about 28% higher than that of the pristine HMS. |
Keyword |
Thermoelectric, higher manganese silicide, Ta doping, melt spinning, spark plasma sintering |
Author |
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Reviewing Status |
มีผู้ประเมินอิสระ |
Status |
ได้รับการตอบรับให้ตีพิมพ์ |
Level of Publication |
นานาชาติ |
citation |
false |
Part of thesis |
true |
Attach file |
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Citation |
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