2012 ©
             Publication
Journal Publication
Title of Article Microstructure, low loss tangent, and excellent temperature stability of Tb+Sb-doped TiO2 with high dielectric permittivity 
Date of Acceptance 21 April 2022 
Journal
     Title of Journal Results in Physics 
     Standard SCOPUS 
     Institute of Journal elsevier 
     ISBN/ISSN  
     Volume 2022 
     Issue 37 
     Month April
     Year of Publication 2022 
     Page  
     Abstract The study of colossal permittivity (CP) materials possessing very high dielectric constants (ε′ > 104) has gained traction due to their suitability for application in microelectronic devices, which are evolving rapidly. In addition, the loss tangent (tanδ) and temperature stability of ε′ are crucial factors to consider for actual applications. In this study, (Tb3+/4++Sb5+) co-doped TiO2 (TSTO) ceramic with an appropriate co-dopant content presented an extremely high ε′ value of ~9.31 × 104 and ultra-low tanδ (~0.013) at 1 kHz. Moreover, its temperaturedependent coefficient of permittivity deviation (Δε’(T)/ε’30◦ C) was lower than |±15%| over the temperature range from − 60 ℃ to 210 ℃. The TSTO ceramics exhibited highly compact microstructures. The grains, grain boundaries, and microwave dielectric phases (i.e., Tb2Ti2O7) were detected, and their presence is considered to determine the dielectric behavior of the TSTO ceramic. The observation of Ti3+ induced by Sb5+ via X-ray photoelectron spectroscopy explains the appearance of semiconducting grains, as confirmed by impedance spectroscopy (IS). The high resistivity resulting from the grain boundaries and microwave dielectric phase was also confirmed by IS. The findings describe the CP properties of TSTO ceramics via the interfacial polarization process and demonstrate that the existence of microwave dielectric phase particles with appropriate content affects the dielectric relaxation, resulting in the reduction of tanδ. 
     Keyword Giant permittivity, Colossal permittivity, TiO2, X9R capacitor, Electron-pinned defect-dipole, Internal barrier layer capacitor 
Author
617020002-9 Mr. NOPPAKORN THANAMOON [Main Author]
Science Doctoral Degree

Reviewing Status มีผู้ประเมินอิสระ 
Status ตีพิมพ์แล้ว 
Level of Publication นานาชาติ 
citation false 
Part of thesis true 
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