| Research Title |
Simulation of steady state two-dimensional p-n junction using finite element method |
| Date of Distribution |
23 March 2011 |
| Conference |
| Title of the Conference |
Siam Physics Congress SPC2011 |
| Organiser |
THAI PHYSICS SOCIETY |
| Conference Place |
Ambassador City Jomtien Hotel, Pattaya, Thailand |
| Province/State |
Pattaya |
| Conference Date |
23 March 2011 |
| To |
26 March 2011 |
| Proceeding Paper |
| Volume |
6 |
| Issue |
1 |
| Page |
155 |
| Editors/edition/publisher |
|
| Abstract |
We have implemented a computer program that solved semiconductor device equations using the finite element method. A set of three coupled equations, (i) Poisson’s equation, (ii) electron continuity equation, and (iii) hole continuity equation were solved iteratively using Gummel’s method. The numerical method used was based on the Galerkin finite element scheme. Upon finding the solutions, the algorithm provided us with important information relevant to semiconductor devices such as potential, and carrier concentration within the device. We simulated two-dimensional p-n junction. The results were in good agreement with previously published studies by De Mari (finite difference method) and Jehsu (finite element method). They simulated steady state one-dimensional p-n junctions. |
| Author |
|
| Peer Review Status |
มีผู้ประเมินอิสระ |
| Level of Conference |
นานาชาติ |
| Type of Proceeding |
Abstract |
| Type of Presentation |
Poster |
| Part of thesis |
true |
| Presentation awarding |
false |
| Attach file |
|
| Citation |
0
|
|
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Publication
Journal Publication
ไทย